Zhuravlev, Konstantin
Институт Физики Полупроводников СО РАН им. Ржанова
Russia, Novosibirsk
Report
- Kablukova E.*, Sabellfeld K.*, Protasov D.**, Zhuravlev K.***
Monte Carlo simulation of drift velocity of electrons in inhomogeneous semiconductors.
*Institute of Computational Mathematics and Mathematical Geophysics SB RAS (Novosibirsk), Russia
**Rzhanov Institute of Semiconductor Physics SB RAS (Novosibirsk), Russia
***Институт Физики Полупроводников СО РАН им. Ржанова (Novosibirsk), Russia